The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Feb. 03, 2010
Shin-bin Huang, Hsinchu County, TW;
Tzung-han Lee, Taipei, TW;
Chung-lin Huang, Taoyuan County, TW;
Inotera Memories, Inc., Taoyuan County, TW;
Abstract
A method for manufacturing capacitor lower electrodes includes a dielectric layer, a first silicon nitride layer and a hard mask layer; partially etching the hard mask layer, the first silicon nitride layer and the dielectric layer to form a plurality of concave portions; depositing a second silicon nitride layer onto the hard mask layer and into the concave portions; partially etching the second silicon nitride layer, the hard mask layer and the dielectric layer to form a plurality of trenches; forming a capacitor lower electrode within each trench and partially etching the first silicon nitride layer, the second silicon nitride layer, the dielectric layer and the capacitor lower electrodes to form an etching area; and etching and removing the dielectric layer from the etching area, thereby a periphery of each capacitor lower electrode is surrounded and attached to by the second silicon nitride layer.