The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2012
Filed:
Jun. 28, 2010
Stephan Kronholz, Dresden, DE;
Carsten Reichel, Dresden, DE;
Falk Graetshe, Dresden, DE;
Boris Bayha, Dresden, DE;
Stephan Kronholz, Dresden, DE;
Carsten Reichel, Dresden, DE;
Falk Graetshe, Dresden, DE;
Boris Bayha, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
High-k metal gate electrode structures are formed on the basis of a threshold adjusting semiconductor alloy formed in the channel region of one type of transistor, which may be accomplished on the basis of selective epitaxial growth techniques using an oxide hard mask growth mask. The hard mask may be provided with superior thickness uniformity on the basis of a wet oxidation process. Consequently, this may allow re-working substrates prior to the selective epitaxial growth process, for instance in view of queue time violations, while also providing superior transistor characteristics in the transistors that do not require the threshold adjusting semiconductor alloy.