The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2012
Filed:
Feb. 01, 2011
Chia-chiang Chang, Taipei County, TW;
Chin-jyi Wu, Kaohsiung, TW;
Shin-chih Liaw, Hsinchu, TW;
Chun-hung Lin, Taipei, TW;
Chia-Chiang Chang, Taipei County, TW;
Chin-Jyi Wu, Kaohsiung, TW;
Shin-Chih Liaw, Hsinchu, TW;
Chun-Hung Lin, Taipei, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle θlarger than 0° and less than 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting pipe extends into the chamber and over the pedestal. The gas-extracting pipe provides a pumping path for particles and side-products having a pumping direction angle θlarger than 0° and less than 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe. The chamber is kept at an ambient atmospheric pressure.