The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2012

Filed:

Sep. 15, 2010
Applicants:

Takuya Futatsuyama, Yokohama, JP;

Yoshihisa Kondo, Fujisawa, JP;

Noboru Shibata, Kawasaki, JP;

Inventors:

Takuya Futatsuyama, Yokohama, JP;

Yoshihisa Kondo, Fujisawa, JP;

Noboru Shibata, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile semiconductor storage device according to an embodiment includes: a memory cell array including an array of electrically rewritable memory cells and configured to be able to store N bits of data (where N is a natural number not less than 2) in one memory cell; and a controller operative to control read, write and erase operations of the memory cell array. The memory cell array includes a first region having a first memory cell operative to retain N bits of data, and a second region having a second memory cell operative to retain M bits of data (where M is a natural number less than N). A data structure of address data received by the controller when accessing the first memory cell is the same as a data structure of address data received from the outside when accessing the second memory cell.


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