The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2012

Filed:

Dec. 10, 2010
Applicants:

Wei-chih Chien, Sijhih, TW;

Yan-ru Chen, Hsinchu, TW;

Yi-chou Chen, Hsinchu, TW;

Inventors:

Wei-Chih Chien, Sijhih, TW;

Yan-Ru Chen, Hsinchu, TW;

Yi-Chou Chen, Hsinchu, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory cell is arranged to enhance the electrical field of the memory element. The memory cell has a metal-oxide memory element, a nonconductive element, and a conductive element. The metal-oxide memory element is in a current path between a first electrode at a first voltage and a second electrode at a second voltage. The nonconductive element is adjacent to the metal-oxide memory element.


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