The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2012

Filed:

Aug. 23, 2010
Applicants:

Mark W. Miles, Atlanta, GA (US);

John Batey, San Jose, CA (US);

Clarence Chui, San Jose, CA (US);

Manish Kothari, San Jose, CA (US);

Ming-hau Tung, San Jose, CA (US);

Inventors:

Mark W. Miles, Atlanta, GA (US);

John Batey, San Jose, CA (US);

Clarence Chui, San Jose, CA (US);

Manish Kothari, San Jose, CA (US);

Ming-Hau Tung, San Jose, CA (US);

Assignee:

QUALCOMM MEMS Technologies, Inc., San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01);
U.S. Cl.
CPC ...
Abstract

In one embodiment, the invention provides a method for fabricating a microelectromechanical systems device. The method comprises fabricating a first layer comprising a film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying the characteristic electromechanical response of the first layer by at least reducing charge build up thereon during activation of the microelectromechanical systems device.


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