The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Mar. 26, 2007
Ya-ju Lee, Hsinchu, TW;
Ta-cheng Hsu, Hsinchu, TW;
Ming-ta Chin, Hsinchu, TW;
Yen-wen Chen, Hsinchu, TW;
Wu-tsung Lo, Hsinchu, TW;
Chung-yuan LI, Hsinchu, TW;
Min-hsun Hsieh, Hsinchu, TW;
Ya-Ju Lee, Hsinchu, TW;
Ta-Cheng Hsu, Hsinchu, TW;
Ming-Ta Chin, Hsinchu, TW;
Yen-Wen Chen, Hsinchu, TW;
Wu-Tsung Lo, Hsinchu, TW;
Chung-Yuan Li, Hsinchu, TW;
Min-Hsun Hsieh, Hsinchu, TW;
Epistar Corporation, Hsinchu, TW;
Abstract
A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [01] or [01] from [100], or toward [011] or [0] from [00] so that the upper surface of the semiconductor substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.