The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Oct. 29, 2009
Gyuhwan OH, Hwaseong-si, KR;
Dong-hyun Im, Hwaseong-si, KR;
Soonoh Park, Suwon-si, KR;
Dongho Ahn, Suwon-si, KR;
Young-lim Park, Hwaseong-si, KR;
Eun-hee Cho, Seoul, KR;
Gyuhwan Oh, Hwaseong-si, KR;
Dong-Hyun Im, Hwaseong-si, KR;
Soonoh Park, Suwon-si, KR;
Dongho Ahn, Suwon-si, KR;
Young-Lim Park, Hwaseong-si, KR;
Eun-Hee Cho, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A method of forming a memory device includes forming a first interlayer insulating layer on a semiconductor substrate, forming a first electrode in the first interlayer insulating layer, the first electrode having a top surface of a rectangular shape extending in a first direction, and forming a variable resistance pattern on the first electrode, the variable resistance pattern having a bottom surface of a rectangular shape extending in a second direction crossing the first direction, the bottom surface of the variable resistance pattern contacting the first electrode, wherein the area of contact between the lower electrode and the variable resistance pattern is substantially equal to a multiplication of a minor axis length of a top surface of the first electrode and a minor axis length of a bottom surface of the variable resistance pattern.