The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Jan. 24, 2011
Christian Lavoie, Pleasantville, NY (US);
Tak H. Ning, Yorktown Heights, NY (US);
Ahmet S. Ozcan, Pleasantville, NY (US);
Bin Yang, Ossining, NY (US);
Zhen Zhang, Ossining, NY (US);
Christian Lavoie, Pleasantville, NY (US);
Tak H. Ning, Yorktown Heights, NY (US);
Ahmet S. Ozcan, Pleasantville, NY (US);
Bin Yang, Ossining, NY (US);
Zhen Zhang, Ossining, NY (US);
International Business Machines Corpration, Armonk, NY (US);
Globalfoudries Inc., Grand Cayman, KY;
Abstract
In one exemplary embodiment, a program storage device readable by a machine, tangibly embodying a program of instructions executable by the machine for performing operations, said operations including: depositing a first layer having a first metal on a surface of a semiconductor structure, where depositing the first layer creates a first intermix region at an interface of the first layer and the semiconductor structure; removing a portion of the deposited first layer to expose the first intermix region; depositing a second layer having a second metal on the first intermix region, where depositing the second layer creates a second intermix region at an interface of the second layer and the first intermix region; removing a portion of the deposited second layer to expose the second intermix region; and performing at least one anneal on the semiconductor structure.