The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Jul. 02, 2009
Tatsuya Ohori, Tokyo, JP;
Kazushige Shiina, Tokyo, JP;
Yasushi Iyechika, Chiba, JP;
Noboru Suda, Aichi, JP;
Yukichi Takamatsu, Kanagawa, JP;
Yoshiyasu Ishihama, Kanagawa, JP;
Takeo Yoneyama, Kanagawa, JP;
Yoshinao Komiya, Kanagawa, JP;
Tatsuya Ohori, Tokyo, JP;
Kazushige Shiina, Tokyo, JP;
Yasushi Iyechika, Chiba, JP;
Noboru Suda, Aichi, JP;
Yukichi Takamatsu, Kanagawa, JP;
Yoshiyasu Ishihama, Kanagawa, JP;
Takeo Yoneyama, Kanagawa, JP;
Yoshinao Komiya, Kanagawa, JP;
Japan Pionics Co., Ltd., Tokyo, JP;
Abstract
A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.