The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2012
Filed:
May. 17, 2010
Riichiro Shirota, Kanagawa-prefecture, JP;
Te-chang Tseng, Hsinchu County, TW;
Riichiro Shirota, Kanagawa-prefecture, JP;
Te-Chang Tseng, Hsinchu County, TW;
RobustFlash Technologies Ltd., Hsinchu County, TW;
Abstract
The invention provides a memory device on a substrate. The memory device comprises semiconductor layers, common word lines, common bit lines and a common source line. The semiconductor layers are stacked on the substrate, wherein each semiconductor layer has a plurality of NAND strings, and each NAND string includes memory cells and at least a string selection transistor. The common word lines are configured above the semiconductor layers, wherein each common word line is coupled to the memory cells arranged in a same row of the semiconductor layers. The common bit lines are configured on the common word lines, wherein each common bit line is coupled to a first ends of the NAND strings arranged in the same column of the semiconductor layers. The common source line is configured on the common word lines and coupled to a second ends of the NAND strings of the semiconductor layers.