The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2012
Filed:
Jul. 30, 2010
Dong Ki Yoon, Seoul, KR;
Shiyong Yi, Hwaseong-si, KR;
Kyoungseon Kim, Suwon-si, KR;
Seongwoon Choi, Suwon-si, KR;
Seokhwan OH, Seoul, KR;
Sang Ouk Kim, Daejeon, KR;
Seung Hak Park, Bucheon-si, KR;
Dong Ki Yoon, Seoul, KR;
Shiyong Yi, Hwaseong-si, KR;
Kyoungseon Kim, Suwon-si, KR;
Seongwoon Choi, Suwon-si, KR;
Seokhwan Oh, Seoul, KR;
Sang Ouk Kim, Daejeon, KR;
Seung Hak Park, Bucheon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Abstract
Methods of forming a pattern and methods of fabricating a semiconductor device having a pattern are provided, the methods include forming a self-assembly induction layer including a first region and a second region on a semiconductor substrate. A block copolymer layer is coated on the self-assembly induction layer. A first pattern, a second pattern and a third pattern are formed by phase separating the block copolymer. At least one of the first, second and third patterns may be removed to form a preliminary pattern. An etching process may be performed using the preliminary pattern as an etching mask. The first pattern contains the same material as that of the second pattern, and the third pattern contains a material different from that of the first pattern.