The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2012
Filed:
Feb. 03, 2011
Seung Wook Park, Gyunggi-do, KR;
Young DO Kweon, Seoul, KR;
Jingli Yuan, Gyunggi-do, KR;
Seon Hee Moon, Seoul, KR;
Ju Pyo Hong, Gyunggi-do, KR;
Jae Kwang Lee, Gyunggi-do, KR;
Seung Wook Park, Gyunggi-do, KR;
Young Do Kweon, Seoul, KR;
Jingli Yuan, Gyunggi-do, KR;
Seon Hee Moon, Seoul, KR;
Ju Pyo Hong, Gyunggi-do, KR;
Jae Kwang Lee, Gyunggi-do, KR;
Samsung Electro-Mechanics Co., Ltd., Suwon, KR;
Abstract
A method of manufacturing a dual face package, including: preparing an upper substrate composed of an insulating layer including a post via-hole; forming a filled electrode in a semiconductor substrate, the filled electrode being connected to a die pad; applying an adhesive layer on one side of the semiconductor substrate including the filled electrode, and attaching the upper substrate to the semiconductor substrate; cutting another side of the semiconductor substrate in a thickness direction, thus making the filled electrode into a through-electrode; and forming a post electrode in the post via-hole, forming an upper redistribution layer connected to the post electrode of the semiconductor substrate, and forming a lower redistribution layer connected to the through-electrode on the other side of the semiconductor substrate.