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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8273598 B1

PDFFull Text
Date of Patent:
Sep. 25, 2012

Filed:

Feb. 03, 2011

Method for forming a self-aligned bit line for pcram and self-aligned etch back process

Applicants:

Matthew J. Breitwisch, Yorktown Heights, NY (US);

Chieh-fang Chen, Taipei County, TW;

Shih-hung Chen, HsinChu County, TW;

Eric A. Joseph, White Plains, NY (US);

Chung Hon Lam, Peekskill, NY (US);

Michael F. Lofaro, Hopewell Junction, NY (US);

Hsiang-lan Lung, Dobbs Ferry, NY (US);

Alejandro G. Schrott, New York, NY (US);

Min Yang, Yorktown Heights, NY (US);

Inventors:

Matthew J. Breitwisch, Yorktown Heights, NY (US);

Chieh-Fang Chen, Taipei County, TW;

Shih-Hung Chen, HsinChu County, TW;

Eric A. Joseph, White Plains, NY (US);

Chung Hon Lam, Peekskill, NY (US);

Michael F. Lofaro, Hopewell Junction, NY (US);

Hsiang-Lan Lung, Dobbs Ferry, NY (US);

Alejandro G. Schrott, New York, NY (US);

Min Yang, Yorktown Heights, NY (US);

Assignees:

International Business Machines Corporation, Armonk, NY (US);

Macronix International Co., Ltd., Hsinchu, TW;

Attorneys:

Scully, Scott, Murphy & Presser, P.C.

Vazken Alexanian, Esq.

Primary Examiner:

Asok Sarkar

Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming bit line aligned to a phase change material that includes forming a pedestal of a sacrificial material on a portion of a lower electrode and forming at least one dielectric material adjacent to the sacrificial material, wherein the at least one dielectric material has an upper surface substantially coplanar with an upper surface of the pedestal of the sacrificial material. The pedestal of the sacrificial material is removed selective to the at least one dielectric material and the lower electrode to provide an opening to an exposed surface of the lower electrode. A phase change material is formed on the exposed surface of the lower electrode, and the opening is filled with a conductive fill material. A self-aligned etch back process is also provided.

Find Patent Forward Citations

Breitwisch, Matthew. (2012). Method for forming a self-aligned bit line for pcram and self-aligned etch back process (U.S. Patent No. 8273598). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8273598

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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