The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2012

Filed:

Sep. 29, 2008
Applicants:

Shinichi Chikaki, Ibaraki, JP;

Takahiro Nakayama, Ibaraki, JP;

Inventors:

Shinichi Chikaki, Ibaraki, JP;

Takahiro Nakayama, Ibaraki, JP;

Assignees:

Renesas Electronics Corporation, Kanagawa, JP;

ULVAC Inc., Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); B05D 3/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A process for manufacturing a hydrophobized microporous film includes: forming an organic silica insulating filmon a substrate; supplying a gaseous mixturecomposed of a silylation gas and an inert gas in an apparatus having the substratedisposed therein at a temperature of the substrate, the substratehaving the organic silica insulating filmformed thereon, and the temperature being equal to or higher than a dew point temperature of the silylation gas and equal to or lower than a vaporizing temperature of the silylation gas; stopping the supply of the gaseous mixtureinto the apparatus; and heating the substrate having the organic silica insulating filmformed thereon, so that a hydrophobizing organic silica insulating film, in which the surface of the organic silica insulating filmand the surfaces of the pores are hydrophobized, can be obtained with reduced increase in the specific dielectric constant.


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