The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Jul. 07, 2010
Chien-li Kuo, Hsinchu, TW;
Jui-hung Cheng, Hsinchu County, TW;
Chien-Li Kuo, Hsinchu, TW;
Jui-Hung Cheng, Hsinchu County, TW;
Victory Gain Group Corporation, The Valley, AI;
Abstract
A silicon based substrate includes a silicon wafer, a first circuit substrate and a second circuit substrate. The silicon wafer includes a first surface and a second surface and at least a through silicon via. The first circuit substrate is disposed on the first surface and includes a plurality of first dielectric layers and a plurality of first conductive trace layers alternately stacked. The second circuit substrate is disposed on the second surface and includes a plurality of second dielectric layers and a plurality of second conductive trace layers alternately stacked. The trace density of the first conductive trace layers is higher than the trace density of the second conductive trace layers. Otherwise, the first dielectric layer includes an inorganic material and the second dielectric layer includes an organic material. A manufacturing method of the silicon based substrate is also provided.