The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2012

Filed:

Jul. 29, 2009
Applicants:

Silvija Gradeĉak, Cambridge, MA (US);

Chun-hao Tseng, Taichung, TW;

Michael Joseph Tambe, Quincy, MA (US);

Matthew John Smith, Hampden, MA (US);

Inventors:

Silvija Gradeĉak, Cambridge, MA (US);

Chun-Hao Tseng, Taichung, TW;

Michael Joseph Tambe, Quincy, MA (US);

Matthew John Smith, Hampden, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A noble metal nanoparticle can be grown on a semiconductor substrate by contacting a predetermined region of the substrate with a solution including noble metal ions. The predetermined region of the semiconductor substrate can be exposed by applying a polymeric layer over the substrate selectively removing a portion of the polymeric layer. The nanoparticles can be prepared in a predetermined pattern. Nanowires having a predetermined diameter and a predetermined position can be grown from the nanoparticles.


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