The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Oct. 13, 2009
Hyuck-chai Jung, Suwon-si, KR;
Jun-hee Lim, Seoul, KR;
Hyuck-Chai Jung, Suwon-si, KR;
Jun-Hee Lim, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
In a method of manufacturing a transistor, a gate structure is formed on a substrate. First impurities are implanted into the substrate to form an impurity region at an upper portion of the substrate adjacent to the gate structure. An epitaxial layer is formed on the impurity region. An insulation layer having an opening partially exposing the epitaxial layer is formed on the substrate. Second impurities are implanted into a portion of the epitaxial layer exposed by the opening.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile