The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Jan. 15, 2009
Won-hyouk Jang, Suwon-si, KR;
Joo-hwa Lee, Suwon-si, KR;
Dong-hyun Kim, Suwon-si, KR;
Hyo-jin Han, Suwon-si, KR;
Kil-ho OK, Suwon-si, KR;
Sung-hoon Kim, Suwon-si, KR;
Won-Hyouk Jang, Suwon-si, KR;
Joo-Hwa Lee, Suwon-si, KR;
Dong-Hyun Kim, Suwon-si, KR;
Hyo-Jin Han, Suwon-si, KR;
Kil-Ho Ok, Suwon-si, KR;
Sung-Hoon Kim, Suwon-si, KR;
Samsung Display Co., Ltd., Yongin, Gyunggi-Do, KR;
Abstract
A virtual measuring device and a method for measuring the deposition thickness of amorphous silicon being deposited on a substrate is disclosed, where the method of measuring the deposition thickness of amorphous silicon includes predicting and adapting operations. In the predicting operation, during a process of depositing the amorphous silicon to a substrate, the deposition thickness is predicted by multiplying a predicted deposition speed to a deposition time by using a prediction model expressing a relationship between a deposition speed and a plurality of process factors that are correlated with the deposition speed obtained from the deposition thickness and the deposition time, and the predicted deposition thickness is compared with the measured deposition thickness, so that the relationship between the plurality of process factors and the deposition speed in the prediction model is compensated according to the comparison difference.