The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Jul. 29, 2010
Chung Yu Hung, Changhua County, TW;
Chih Min HU, Kaohsiung, TW;
Wing Chor Chan, Hsinchu, TW;
Jeng Gong, Taichung, TW;
Chung Yu Hung, Changhua County, TW;
Chih Min Hu, Kaohsiung, TW;
Wing Chor Chan, Hsinchu, TW;
Jeng Gong, Taichung, TW;
Abstract
A Schottky diode comprises an ohmic layer that can serve as a cathode and a metal layer that can serve as an anode, and a drift channel formed of semiconductor material that extends between the ohmic and metal layers. The drift channel includes a heavily doped region adjacent to the ohmic contact layer. The drift channel forms a Schottky barrier with the metal layer. A pinch-off mechanism is provided for pinching off the drift channel while the Schottky diode is reverse-biased. As a result, the level of saturation or leakage current between the metal layer and the ohmic contact layer under a reverse bias condition of the Schottky diode is reduced.