The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 11, 2012

Filed:

Dec. 27, 2010
Applicants:

Hsiang-lan Lung, Dobbs Ferry, NY (US);

Chieh-fang Chen, Banciao, TW;

Inventors:

Hsiang-Lan Lung, Dobbs Ferry, NY (US);

Chieh-Fang Chen, Banciao, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Memory cells are described along with methods for manufacturing. A memory cell described herein includes a bottom electrode, a top electrode overlying the bottom electrode, a via having a sidewall extending from a bottom electrode to a top electrode, and a memory element electrically coupling the bottom electrode to the top electrode. The memory element has an outer surface contacting a dielectric sidewall spacer that is on the sidewall of the via, and comprises a stem portion on the bottom electrode and a cup portion on the stem portion. A fill material is within an interior defined by an inner surface of the cup portion of the memory element.


Find Patent Forward Citations

Lung, Hsiang-Lan. (2012). Phase change memory cell with filled sidewall memory element and method for fabricating the same (U.S. Patent No. 8263960). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8263960

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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