The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Dec. 22, 2008
John Bon-woong Koo, Andover, MA (US);
David J. Twiss, Topsfield, MA (US);
Chris Campbell, Newburyport, MA (US);
Frank Sinclair, Quincy, MA (US);
Alexander S. Perel, Danvers, MA (US);
Craig R. Chaney, Rockport, MA (US);
Wilhelm P. Platow, Somerville, MA (US);
Eric R. Cobb, Danvers, MA (US);
John Bon-Woong Koo, Andover, MA (US);
David J. Twiss, Topsfield, MA (US);
Chris Campbell, Newburyport, MA (US);
Frank Sinclair, Quincy, MA (US);
Alexander S. Perel, Danvers, MA (US);
Craig R. Chaney, Rockport, MA (US);
Wilhelm P. Platow, Somerville, MA (US);
Eric R. Cobb, Danvers, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source.