The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Sep. 28, 2010
Manabu Tomisaka, Nagoya, JP;
Hidetoshi Katou, Komaki, JP;
Yutaka Fukuda, Kariya, JP;
Akira Tai, Okazaki, JP;
Kazuo Akamatsu, Okazaki, JP;
Yoshiko Fukuda, Kariya, JP;
Yuji Fukuda, Osaka, JP;
Mika Ootsuki, Kariya, JP;
Manabu Tomisaka, Nagoya, JP;
Hidetoshi Katou, Komaki, JP;
Yutaka Fukuda, Kariya, JP;
Akira Tai, Okazaki, JP;
Kazuo Akamatsu, Okazaki, JP;
Yoshiko Fukuda, Kariya, JP;
Yuji Fukuda, Osaka, JP;
Mika Ootsuki, Kariya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A formation method of a metallic electrode of a semiconductor device is disclosed. The method includes: acquiring data about surface shape of a surface part of a semiconductor substrate; and causing a deformation device to deform the semiconductor substrate based on the data so that a distance between a cutting plane and the surface part falls within a required accuracy in cutting amount. In deforming the semiconductor substrate, multiple actuators are used as the deformation device. A pitch of the multiple actuators is set to a value that is greater than one-half of wavelength of spatial frequency of a thickness distribution of the semiconductor substrate and that is less than or equal to the wavelength.