The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Nov. 12, 2010
Shunpei Yamazaki, Setagaya, JP;
Sachiaki Teduka, Atsugi, JP;
Satoshi Toriumi, Ebina, JP;
Makoto Furuno, Atsugi, JP;
Yasuhiro Jinbo, Atsugi, JP;
Koji Dairiki, Atsugi, JP;
Hideaki Kuwabara, Isehara, JP;
Shunpei Yamazaki, Setagaya, JP;
Sachiaki Teduka, Atsugi, JP;
Satoshi Toriumi, Ebina, JP;
Makoto Furuno, Atsugi, JP;
Yasuhiro Jinbo, Atsugi, JP;
Koji Dairiki, Atsugi, JP;
Hideaki Kuwabara, Isehara, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film.