The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Feb. 03, 2009
Depak C. Sekar, Sunnyvale, CA (US);
April Schricker, Fremont, CA (US);
Xiying Chen, San Jose, CA (US);
Klaus Schuegraf, San Jose, CA (US);
Raghuveer Makala, Sunnyvale, CA (US);
Depak C. Sekar, Sunnyvale, CA (US);
April Schricker, Fremont, CA (US);
Xiying Chen, San Jose, CA (US);
Klaus Schuegraf, San Jose, CA (US);
Raghuveer Makala, Sunnyvale, CA (US);
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
Optimized electrodes for ReRAM memory cells and methods for forming the same are discloses. One aspect comprises forming a first electrode, forming a state change element in contact with the first electrode, treating the state change element, and forming a second electrode. Treating the state change element increases the barrier height at the interface between the second electrode and the state change element. Another aspect comprises forming a first electrode in a manner to deliberately establish a certain degree of amorphization in the first electrode, forming a state change element in contact with the first electrode. The degree of amorphization of the first electrode is either at least as great as the degree of amorphization of the state change element or no more than 5 percent less than the degree of amorphization of the state change element.