The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Nov. 11, 2008
Margaret E. Best, San Jose, CA (US);
Xing-cai Guo, Tracy, CA (US);
Thomas E. Karis, Aromas, CA (US);
Dan S. Kercher, Santa Cruz, CA (US);
Charles M. Mate, San Jose, CA (US);
Tsai-wei Wu, San Jose, CA (US);
Margaret E. Best, San Jose, CA (US);
Xing-Cai Guo, Tracy, CA (US);
Thomas E. Karis, Aromas, CA (US);
Dan S. Kercher, Santa Cruz, CA (US);
Charles M. Mate, San Jose, CA (US);
Tsai-Wei Wu, San Jose, CA (US);
HGST Netherlands B.V, Amsterdam, NL;
Abstract
Nanoimprint lithography using resist material with the addition of a surfactant is described. A template release layer is formed on a pattern of a template. A non-ionic surfactant is added to a resist material to form a mixed resist material. The resist material may comprise a hydrocarbon material having an unsaturated bond, such as an acrylate material. The surfactant may comprise polyalkylene glycol or an organically modified polysiloxane. A resist layer is then formed on a substrate from the mixed resist material. The surfactant added to the resist material forms a resist release layer on the surface of the resist layer. The template is then pressed into the resist layer, where the template release layer and the resist release layer are between the pattern of the template and the resist layer.