The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8258545 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 04, 2012

Filed:

Mar. 14, 2011
Applicants:

Wei-tung Huang, Tainan, TW;

Chun-tsung Kuo, Tainan, TW;

Shih-chang Liu, Alian Township, TW;

Yeur-luen Tu, Taichung, TW;

Inventors:

Wei-Tung Huang, Tainan, TW;

Chun-Tsung Kuo, Tainan, TW;

Shih-Chang Liu, Alian Township, TW;

Yeur-Luen Tu, Taichung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit includes a bipolar transistor disposed over a substrate. The bipolar transistor includes a base electrode disposed around at least one germanium-containing layer. An emitter electrode is disposed over the at least one germanium-containing layer. At least one isolation structure is disposed between the emitter electrode and the at least one germanium-containing layer. A top surface of the at least one isolation structure is disposed between and electrically isolating a top surface of the emitter electrode from a top surface of the at least one germanium-containing layer.


Find Patent Forward Citations

Huang, Wei-Tung. (2012). Integrated circuit including a bipolar transistor and methods of making the same (U.S. Patent No. 8258545). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8258545

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