The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Aug. 02, 2010
Shunpei Yamazaki, Tokyo, JP;
Yukie Suzuki, Kanagawa, JP;
Yasuyuki Arai, Kanagawa, JP;
Takayuki Inoue, Kanagawa, JP;
Erumu Kikuchi, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Yukie Suzuki, Kanagawa, JP;
Yasuyuki Arai, Kanagawa, JP;
Takayuki Inoue, Kanagawa, JP;
Erumu Kikuchi, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A microcrystalline semiconductor film with high crystallinity is manufactured. In addition, a thin film transistor with excellent electric characteristics and high reliability, and a display device including the thin film transistor are manufactured with high productivity. A deposition gas containing silicon or germanium is introduced from an electrode including a plurality of projecting portions provided in a treatment chamber of a plasma CVD apparatus, glow discharge is caused by supplying high-frequency power, and thereby crystal particles are formed over a substrate, and a microcrystalline semiconductor film is formed over the crystal particles by a plasma CVD method.