The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
Aug. 27, 2010
Yun-hsiu Chen, Hsin Chu, TW;
Syun-ming Jang, Hsin-Chu, TW;
Pang-yen Tsai, Jhu-Bei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for fabricating a strained-silicon semiconductor device to ameliorate undesirable variation in selectively grown epitaxial film thickness. The layout or component configuration for the proposed semiconductor device is evaluated to determine areas of relatively light or dense population in order to determine whether local-loading-effect defects are likely to occur. If a possibility of such defects occurring exists, a dummy pattern of epitaxial structures may be indicated. If so, the dummy pattern appropriate to the proposed layout is created, incorporated into the mask design, and then implemented on the substrate along with the originally-proposed component configuration.