The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
Nov. 22, 2010
Anthony Konecni, Boise, ID (US);
Josephine Juhwei Liu, Boise, ID (US);
Deenesh Padhi, Sunnyvale, CA (US);
Bok Hoen Kim, San Jose, CA (US);
William H. Mcclintock, Los Altos, CA (US);
Anthony Konecni, Boise, ID (US);
Josephine Juhwei Liu, Boise, ID (US);
Deenesh Padhi, Sunnyvale, CA (US);
Bok Hoen Kim, San Jose, CA (US);
William H. McClintock, Los Altos, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method and apparatus for forming an amorphous carbon layer on a substrate is provided. A first portion of the amorphous carbon layer having a high stress level is formed from a hydrocarbon precursor having high dilution ratio, with optional amine precursor included to add stress-elevating nitrogen. A second portion of the amorphous carbon layer having a low stress level is formed on the first portion by reducing the dilution ratio of the hydrocarbon precursor and lowering or eliminating the amine gas. Pressure, temperature, and RF power input may be adjusted instead of, or in addition to, precursor flow rates, and different precursors may be used for different stress levels.