The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
Apr. 22, 2009
Hyung Soon Park, Gyeonggi-do, KR;
Noh Jung Kwak, Gyeonggi-do, KR;
Seung Jin Yeom, Gyeonggi-do, KR;
Choon Kun Ryu, Seoul, KR;
Jong Goo Jung, Gyeonggi-do, KR;
Sung Jun Kim, Gyeonggi-do, KR;
Hyung Soon Park, Gyeonggi-do, KR;
Noh Jung Kwak, Gyeonggi-do, KR;
Seung Jin Yeom, Gyeonggi-do, KR;
Choon Kun Ryu, Seoul, KR;
Jong Goo Jung, Gyeonggi-do, KR;
Sung Jun Kim, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A process for forming a copper wiring and the prevention of copper ion migration in a semiconductor device is disclosed herein. The process includes conducting a post-cleaning process for a copper layer that is to form the cooper wiring after already having undergone a CMP process. The post-cleaning process includes conducting a primary chemical cleaning using a citric acid-based chemical. A secondary chemical cleaning is then conducted on the copper layer having undergone the primary chemical cleaning using an ascorbic acid-based chemical. After the post-cleaning process is completed, the migration of copper ions over time is prevented thereby improving the reliability of the semiconductor device.