The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
Nov. 07, 2008
Tomokatsu Watanabe, Tokyo, JP;
Sunao Aya, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
Keiko Sakai, Tokyo, JP;
Shohei Yoshida, Tokyo, JP;
Toshikazu Tanioka, Tokyo, JP;
Yukiyasu Nakao, Tokyo, JP;
Yoichiro Tarui, Tokyo, JP;
Masayuki Imaizumi, Tokyo, JP;
Tomokatsu Watanabe, Tokyo, JP;
Sunao Aya, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
Keiko Sakai, Tokyo, JP;
Shohei Yoshida, Tokyo, JP;
Toshikazu Tanioka, Tokyo, JP;
Yukiyasu Nakao, Tokyo, JP;
Yoichiro Tarui, Tokyo, JP;
Masayuki Imaizumi, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A method of manufacturing a silicon carbide semiconductor device having a silicon carbide layer, the method including a step of implanting at least one of Al ions, B ions and Ga ions having an implantation concentration in a range not lower than 1E19 cmand not higher than 1E21 cmfrom a main surface of the silicon carbide layer toward the inside of the silicon carbide layer while maintaining the temperature of the silicon carbide layer at 175° C. or higher, to form a p-type impurity layer; and forming a contact electrode whose back surface establishes ohmic contact with a front surface of the p-type impurity layer on the front surface of the p-type impurity layer.