The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
Mar. 27, 2011
Chih-yu Tseng, Hsinchu, TW;
Chien-ting Lin, Hsin-Chu, TW;
Kun-szu Tseng, Pingtung County, TW;
Cheng-wen Fan, Tainan County, TW;
Victor-chiang Liang, Hsin-Chu, TW;
Chih-Yu Tseng, Hsinchu, TW;
Chien-Ting Lin, Hsin-Chu, TW;
Kun-Szu Tseng, Pingtung County, TW;
Cheng-Wen Fan, Tainan County, TW;
Victor-Chiang Liang, Hsin-Chu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for fabricating metal gate transistor and resistor is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation in the substrate of the resistor region; forming a tank in the shallow trench isolation of the resistor region; forming at least one gate in the transistor region and a resistor in the tank of the resistor region; and transforming the gate into a metal gate transistor.