The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2012

Filed:

Jun. 22, 2010
Applicants:

Moosung Kim, Yongin-si, KR;

Youngho Lim, Yongin-si, KR;

Inventors:

Moosung Kim, Yongin-si, KR;

Youngho Lim, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory device includes a first address decoder and a second address decoder. The first address decoder includes a plurality of transistors disposed in a first well, and the second address decoder includes a plurality of transistors disposed in a second well that is electrically isolated from the first well. The first and second address decoders are associated with first and second memory blocks, respectively. A switch circuit is configured to provide a negative voltage to one of the first address decoder and the second address decoder on the basis of block address information that specifies an address included in one of the first memory block and the second memory block. Related methods of operation are also discussed.


Find Patent Forward Citations

Kim, Moosung. (2012). Nonvolatile memory devices operable using negative bias voltages and related methods of operation (U.S. Patent No. 8248852). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8248852

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…