The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2012

Filed:

Feb. 17, 2009
Applicants:

Se-chung OH, Suwon-si, KR;

Jang-eun Lee, Suwon-si, KR;

Kyung-tae Nam, Suwon-si, KR;

Woo-jin Kim, Yongin-si, KR;

Dae-kyom Kim, Daejeon, KR;

Jun-ho Jeong, Suwon-si, KR;

Seung-yeol Lee, Seoul, KR;

Inventors:

Se-Chung Oh, Suwon-si, KR;

Jang-Eun Lee, Suwon-si, KR;

Kyung-Tae Nam, Suwon-si, KR;

Woo-Jin Kim, Yongin-si, KR;

Dae-Kyom Kim, Daejeon, KR;

Jun-ho Jeong, Suwon-si, KR;

Seung-Yeol Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A magnetic memory device and a method of fabricating the same. The magnetic memory device includes a free layer, a write element, and a read element. The write element changes the magnetization direction of the free layer, and the read element senses the magnetization direction of the free layer. Herein, the write element includes a current confinement layer having a width smaller than the minimum width of the free layer to locally increase the density of a current flowing through the write element.


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