The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2012
Filed:
Jul. 13, 2011
Applicant:
Shih Wei Wang, Hsin-Chu, TW;
Inventor:
Shih Wei Wang, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/8246 (2006.01); H01L 21/8247 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming and operating an integrated circuit, including providing a substrate; forming a bottom electrode over the substrate, wherein the bottom electrode is in or over a lowest metallization layer over the substrate; forming a blocking layer over the substrate; forming a charge-trapping layer over the blocking layer; forming an insulation layer over the charge-trapping layer; forming a control gate over the insulation layer; forming a tunneling layer over the control gate; and forming a top electrode over the tunneling layer.