The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Dec. 01, 2010
Kaizhong Gao, Eden Prairie, MN (US);
Haiwen Xi, San Jose, CA (US);
Yiming Shi, Maple Grove, MN (US);
Song S. Xue, Edina, MN (US);
Sining Mao, Eden Prairie, MN (US);
Kaizhong Gao, Eden Prairie, MN (US);
Haiwen Xi, San Jose, CA (US);
Yiming Shi, Maple Grove, MN (US);
Song S. Xue, Edina, MN (US);
Sining Mao, Eden Prairie, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.