The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Sep. 23, 2008
Erh-kun Lai, Taichung County, TW;
Chiahua Ho, Kaohsiung, TW;
Kuang Yeu Hsieh, Hsinchu, TW;
Shih-hung Chen, Hsinchu County, TW;
Erh-Kun Lai, Taichung County, TW;
ChiaHua Ho, Kaohsiung, TW;
Kuang Yeu Hsieh, Hsinchu, TW;
Shih-Hung Chen, Hsinchu County, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A process in the manufacturing of a resistor random access memory with a confined melting area for switching a phase change in the programmable resistive memory. The process initially formed a pillar comprising a substrate body, a first conductive material overlying the substrate body, a programmable resistive memory material overlying the first conductive material, a high selective material overlying the programmable resistive memory material, and a silicon nitride material overlying the high selective material. The high selective material in the pillar is isotropically etched on both sides of the high selective material to create a void on each side of the high selective material with a reduced length. A programmable resistive memory material is deposited in a confined area previously occupied by the reduced length of the poly, and the programmable resistive memory material is deposited into an area previously occupied by the silicon nitride material.