The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Feb. 05, 2010
Applicant:
Hussein I. Hanafi, Basking Ridge, NJ (US);
Inventor:
Hussein I. Hanafi, Basking Ridge, NJ (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods, devices and systems for a FinFET are provided. One method embodiment includes forming a FinFET by forming a relaxed silicon germanium (SiGe) body region for a fully depleted Fin field effect transistor (FinFET) having a body thickness of at least 10 nanometers (nm) for a process design rule of less than 25 nm. The method also includes forming a source and a drain on opposing ends of the body region, wherein the source and the drain are formed with halo ion implantation and forming a gate opposing the body region and separated therefrom by a gate dielectric.