The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Jun. 28, 2010
Dean Jennings, Beverly, MA (US);
Haifan Liang, Draper, UT (US);
Mark Yam, Monte Sereno, CA (US);
Vijay Parihar, Fremont, CA (US);
Abhilash Mayur, Salinas, CA (US);
Aaron Hunter, Santa Cruz, CA (US);
Bruce Adams, Portland, OR (US);
Joseph Michael Ranish, San Jose, CA (US);
Dean Jennings, Beverly, MA (US);
Haifan Liang, Draper, UT (US);
Mark Yam, Monte Sereno, CA (US);
Vijay Parihar, Fremont, CA (US);
Abhilash Mayur, Salinas, CA (US);
Aaron Hunter, Santa Cruz, CA (US);
Bruce Adams, Portland, OR (US);
Joseph Michael Ranish, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A thermal processing apparatus and method in which a first laser source, for example, a COemitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the COradiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.