The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Jan. 04, 2011
Applicants:
Ziyun Wang, Bethel, CT (US);
Chongying Xu, New Milford, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Inventors:
Ziyun Wang, Bethel, CT (US);
Chongying Xu, New Milford, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Assignee:
Advanced Technology Materials, Inc., Danbury, CT (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes.