The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
May. 10, 2010
Lawrence A. Clevenger, Lagrangeville, NY (US);
Maxime Darnon, White Plains, NY (US);
Qinghuang Lin, Yorktown Heights, NY (US);
Anthony D. Lisi, Poughkeepsie, NY (US);
Satyanarayana V. Nitta, Poughquag, NY (US);
Lawrence A. Clevenger, Lagrangeville, NY (US);
Maxime Darnon, White Plains, NY (US);
Qinghuang Lin, Yorktown Heights, NY (US);
Anthony D. Lisi, Poughkeepsie, NY (US);
Satyanarayana V. Nitta, Poughquag, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.