The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
May. 11, 2010
Applicants:
Ming-hsiu Lee, Hsinchu, TW;
Chao-i Wu, Tainan, TW;
Ming-chang Kuo, Changhua, TW;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor process test structure comprises an electrode, a charge-trapping layer, and a diffusion region. The test structure is a capacitor-like structure in which the charge-trapping layer will trap charges during various processing steps. Gate-induced drain leakage (GIDL) measurement techniques can then be used to characterize the charging status of the test structure.
Lee, Ming-Hsiu. (2012). Test structure and method for detecting charge effects during semiconductor processing (U.S. Patent No. 8241928). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8241928
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