The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Mar. 02, 2010
Yen-hao Shih, Elmsford, NY (US);
Ming-hsiu Lee, Hsinchu, TW;
Chao-i Wu, Zhubei, TW;
Hsiang-lan Lung, Dobbs Ferry, NY (US);
Chung Hon Lam, Peekskill, NY (US);
Roger Cheek, Somers, NY (US);
Matthew J. Breitwisch, Yorktown Heights, NY (US);
Bipin Rajendran, New York, NY (US);
Yen-Hao Shih, Elmsford, NY (US);
Ming-Hsiu Lee, Hsinchu, TW;
Chao-I Wu, Zhubei, TW;
Hsiang-Lan Lung, Dobbs Ferry, NY (US);
Chung Hon Lam, Peekskill, NY (US);
Roger Cheek, Somers, NY (US);
Matthew J. Breitwisch, Yorktown Heights, NY (US);
Bipin Rajendran, New York, NY (US);
Macronix International Co., Ltd., Hsinchu, TW;
International Business Machines Corporation, Armonk, NY (US);
Abstract
Phase change memory devices and methods for operating described herein are based on the discovery that, following an initial high current operation applied to a phase change memory cell to establish the high resistance reset state, the current-voltage (I-V) behavior of the memory cell under different bias voltages can be used to detect if the memory cell is a defect cell having poor data retention characteristics.