The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Jan. 19, 2010
Matthew S. Angyal, Hopewell Junction, NY (US);
Lawrence A. Clevenger, Hopewell Junction, NY (US);
Vincent J. Mcgahay, Hopewell Junction, NY (US);
Satyanarayana V. Nitta, Yorktown Heights, NY (US);
Shaoning Yao, Hopewell Junction, NY (US);
Matthew S. Angyal, Hopewell Junction, NY (US);
Lawrence A. Clevenger, Hopewell Junction, NY (US);
Vincent J. McGahay, Hopewell Junction, NY (US);
Satyanarayana V. Nitta, Yorktown Heights, NY (US);
Shaoning Yao, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Deep trenches formed beneath contact level in a semiconductor substrate function as crackstops, in a die area or in a scribe area of the wafer, and may be disposed in rows of increasing distance from a device which they are intended to protect, and may be located under a lattice work crackstop structure in an interconnect stack layer. The deep trenches may remain unfilled, or may be filled with a dielectric material or conductor. The deep trenches may have a depth into the substrate of approximately 1 micron to 100 microns, and a width of approximately 10 nm to 10 microns.