The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Dec. 16, 2011
Kuo Bin Huang, Jhubei, TW;
Ssu-yi LI, JuiBei, TW;
Ryan Chia-jen Chen, Chiayi, TW;
Chi-ming Yang, Hsian-San, TW;
Chyi Shyuan Chern, Taipei, TW;
Chin-hsiang Lin, Hsinchu, TW;
Kuo Bin Huang, Jhubei, TW;
Ssu-Yi Li, JuiBei, TW;
Ryan Chia-Jen Chen, Chiayi, TW;
Chi-Ming Yang, Hsian-San, TW;
Chyi Shyuan Chern, Taipei, TW;
Chin-Hsiang Lin, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure with a metal gate structure includes a first type field-effect transistor having a first gate including: a high k dielectric material on a substrate, a first metal layer on the high k dielectric material layer and having a first work function, and a first aluminum layer on the first metal layer. The first aluminum layer includes an interfacial layer including aluminum, nitrogen and oxygen. The device also includes a second type field-effect transistor having a second gate including: the high k dielectric material on the substrate, a second metal layer on the high k dielectric material layer and having a second work function different from the first work function, and a second aluminum layer on the second metal layer.