The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2012

Filed:

Sep. 10, 2009
Applicants:

Shih-kuei MA, Hsinchu, TW;

Ta-chuan Kuo, Hsinchu, TW;

Inventors:

Shih-Kuei Ma, Hsinchu, TW;

Ta-Chuan Kuo, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device including a substrate, an epitaxial layer, a first sinker, a transistor, a diode unit, a first buried layer, and a second buried layer is provided. When the semiconductor device is operated at the high voltage, the highly large substrate current due to the external load is avoided through the diode unit disposed in the semiconductor device of an embodiment consistent with the invention. Furthermore, according to the design of the semiconductor device, the issue of the narrow input voltage range is improved, and interference of the semiconductor device with the other semiconductor devices is prevented.


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