The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Aug. 23, 2011
Chung-long Chang, Dou-Liu, TW;
David Ding-chung LU, Hsin-Chu, TW;
Chia-yi Chen, Hsin-Chu, TW;
I-lu Wu, Hsin-Chu, TW;
Chung-Long Chang, Dou-Liu, TW;
David Ding-Chung Lu, Hsin-Chu, TW;
Chia-Yi Chen, Hsin-Chu, TW;
I-Lu Wu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure including a capacitor having increased capacitance and improved electrical performance is provided. The semiconductor structure includes a substrate and a MIM capacitor over the substrate. The MIM capacitor includes a bottom plate, an insulating layer over the bottom plate, and a top plate over the insulating layer. The semiconductor structure further includes a MOS device including a gate dielectric over the substrate and a metal-containing gate electrode free from polysilicon on the gate dielectric, wherein the metal-containing gate electrode is formed of a same material and has a same thickness as the bottom plate.