The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8237206 B1

Date of Patent:

Aug. 07, 2012

Filed:

Aug. 12, 2008

Cmos image sensor, method of making the same, and method of suppressing dark leakage and crosstalk for cmos image sensor

Applicant:

Hsin-ping Wu, Hsinchu, TW;

Inventor:

Hsin-Ping Wu, Hsinchu, TW;

Assignee:

United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Long Tran

Int. Cl.

CPC ...

H01L 31/113 (2006.01); H01L 31/00 (2006.01);

U.S. Cl.

CPC ...

Abstract

A CMOS image sensor, in which an implantation process is performed on substrate under isolation structures each disposed between two adjacent photosensor cell structures. The implantation process is a destructive implantation to form lattice effects/trap centers. No defect repair process is carried out after the implantation process is performed. The implants can reside at the isolation structures or in the substrate under the isolation structures. Dark leakage and crosstalk are thus suppressed.

Find Patent Forward Citations

Wu, Hsin-Ping. (2012). Cmos image sensor, method of making the same, and method of suppressing dark leakage and crosstalk for cmos image sensor (U.S. Patent No. 8237206). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8237206

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile