The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Jan. 18, 2011
Yifeng Wu, Goleta, CA (US);
Rongming Chu, Goleta, CA (US);
Primit Parikh, Goleta, CA (US);
Umesh Mishra, Montecito, CA (US);
Ilan Ben-yaacov, Goleta, CA (US);
Likun Shen, Goleta, CA (US);
Yifeng Wu, Goleta, CA (US);
Rongming Chu, Goleta, CA (US);
Primit Parikh, Goleta, CA (US);
Umesh Mishra, Montecito, CA (US);
Ilan Ben-Yaacov, Goleta, CA (US);
Likun Shen, Goleta, CA (US);
Transphorm Inc., Goleta, CA (US);
Abstract
Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact is connected to the 2DEG, forming an ohmic contact with the layer containing the 2DEG.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile